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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
High Voltage: VCEO = 50 V. Epitaxial planar type. PNP complement: L2SA812 Pb-Free Package is available.
L2SC1623*LT1
3
DEVICE MARKING AND ORDERING INFORMATION
Device L2SC1623QLT1 L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G Marking L5 L5 (Pb-Free) L6 L6 (Pb-Free) L7 L7 (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel
1 2
SOT- 23
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Symbol VCEO VCBO VEBO IC Value 50 60 7 150 Unit V V V mAdc
THERMAL CHARATEERISTICS
Characteristic Total Device Dissipation FR-5 Board, (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
R JA Tj ,Tstg
o o
Symbol PD
Max
Unit
o
225
o
mW mW/oC
o
1.8
R JA
556
C/W
PD 300 2.4 417 -55 to +150
o
mW mW/oC C/W
o
C
L2SC1623-1/5
LESHAN RADIO COMPANY, LTD.
L2SC1623*LT1
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic Symbol I I Min Typ Max 0.1 0.1 Unit A A
OFF CHARACTERISTICS
Collector Cutoff Current (VCB=60V) Emitter Cutoff Current (VBE=5V)
CBO EBO
ON CHARACTERISTICS
DC Current Gain (IC=1.0mA, VCE=6V) Collector-Emitter Saturation Voltage (IC=100mA,IB=10mA) Base-Emitter Saturation Voltage (IC=100mA,IB=10mA) Base -Emitter On Voltage IC=1mA,VCE=6.0V) hFE V CE(sat) VBE(sat) V BE 120 -
0.15 0.86 0.62
560 0.3 1.0 0.65 V V V
0.55
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (VCE=6.0V,IE =1.0MHz) Output Capacitance(VCE = 6V, IE=0, f=1.0MHz) Ft Cob 250 3 MHz pF
hFE Values are classified as followes
NOTE:
* hFE
Q 120~270
R 180~390
S 270~560
L2SC1623-2/5
LESHAN RADIO COMPANY, LTD.
L2SC1623*LT1
Fig.1 Grounded emitter propagation characteristics
50
Fig.2 Grounded emitter output characteristics( )
100
0.50mA
T A = 25C
VCE= 6 V
20
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
80
10 50
T A = 100 C
25C
60
2 1
- 55C
40
0.5
20
0.2 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 0 0.4 0.8 1.2 1.6 2.0
V BE , BASE TO EMITTER VOLTAGE(V)
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
10
Fig.4 DC current gain vs. collector current ( )
500
I C, COLLECTOR CURRENT (mA)
8
6
h FE, DC CURRENT GAIN
0 4 8 12 16 20
200
100
4
50
2
20
0 10 0.2 0.5 1 2 5 10 20 50 100 200
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
I C, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Fig.6 Collector-emitter saturation voltage vs. collector current
0.5
500
0.2
h FE, DC CURRENT GAIN
200
0.1
100
0.05
50
0.02
20
0.01 0.2 0.5 1 2 5 10 20 50 100 200
10 0.2 0.5 1 2 5 10 20 50 100 200
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
L2SC1623-3/5
LESHAN RADIO COMPANY, LTD.
L2SC1623*LT1
Fig.7 Collector-emitter saturation voltage vs. collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
0.5
Fig.8 Collector-emitter saturation voltage vs. collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01 0.2 0.5 1 2 5 10 20 50 100 200
0.01 0.2 0.5 1 2 5 10 20 50 100
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage
C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF)
20
f r , TRANSITION FREQUENCY(MHz)
500
10
200
5
100
2
50 -0.5 -1 -2 -5 -10 -20 -50 -100
1 0.2 0.5 1 2 5 10 20 50
I E, EMITTER CURRENT (mA)
V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V)
Fig.11 Base-collector time constant vs.emitter current
C c-r bb, BASE COLLECTOR TIME CONSTANT( ps)
200
100
50
20
10 -0.2 -0.5 -1 -2 -5 -10
I E, EMITTER CURRENT (mA)
L2SC1623-4/5
LESHAN RADIO COMPANY, LTD.
L2SC1623*LT1 SOT-23
NOTES:
A L
3 1 2
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
BS
DIM A B C D G H J K L S V
V
G
C D H K J
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
PIN 1. BASE 2. EMITTER 3. COLLECTOR
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
L2SC1623-5/5

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